? 1999 mos field effect transistor 2sK3353 switching n-channel power mos fet industrial use data sheet document no. d14130ej1v0ds00 (1st edition) date published june 1999 ns cp(k) printed in japan the information in this document is subject to change without notice. before using this document, please confirm that this is the latest version. not all devices/types available in every country. please check with local nec representative for availability and additional information. the mark h shows major revised points. description the 2sK3353 is n-channel mos field effect transistor designed for high current switching applications. features super low on-state resistance: r ds(on)1 = 9.5 m w max. (v gs = 10 v, i d = 41 a) r ds(on)2 = 14 m w max. (v gs = 4 v, i d = 41 a) low c iss : c iss = 4650 pf typ. built-in gate protection diode absolute maximum ratings (t a = 25c) drain to source voltage v dss 60 v gate to source voltage v gss(ac) 20 v drain current (dc) i d(dc) 82 a drain current (pulse) note1 i d(pulse) 328 a total power dissipation (t c = 25c) p t 95 w total power dissipation (t a = 25c) p t 1.5 w channel temperature t ch 150 c storage temperature t stg C55 to +150 c single avalanche current note2 i as 45 a single avalanche energy note2 e as 202 mj notes 1. pw 10 m s, duty cycle 1 % 2. starting t ch = 25 c, r g = 25 w, v gs = 20 v ? 0 v thermal resistance channel to case rth(ch-c) 1.32 c/w channel to ambient rth(ch-a) 83.3 c/w ordering information part number package 2sK3353 to-220ab 2sK3353-s to-262 2sK3353-z to-220smd h h h h h h h h h www.datasheet.in
data sheet d14130ej1v0ds00 2 2sK3353 electrical characteristics (t a = 25 c) characteristics symbol test conditions min. typ. max. unit drain to source on-state resistance r ds(on)1 v gs = 10 v, i d = 41 a7.59.5m w r ds(on)2 v gs = 4 v, i d = 41 a 10.5 14 m w gate to source cut-off voltage v gs(off) v ds = 10 v, i d = 1 ma 1.5 2.0 2.5 v forward transfer admittance | y fs |v ds = 10 v, i d = 41 a3050s drain leakage current i dss v ds = 60 v, v gs = 0 v10 m a gate to source leakage current i gss v gs = 20 v, v ds = 0 v 10 m a input capacitance c iss v ds = 10 v, v gs = 0 v, f = 1 mhz 4650 pf output capacitance c oss 780 pf reverse transfer capacitance c rss 380 pf turn-on delay time t d(on) i d = 41 a, v gs(on) = 10 v, v dd = 30 v, 100 ns rise time t r r g = 10 w 1550 ns turn-off delay time t d(off) 280 ns fall time t f 420 ns total gate charge q g i d = 82 a , v dd = 48 v, v gs = 10 v90nc gate to source charge q gs 14 nc gate to drain charge q gd 38 nc body diode forward voltage v f(s-d) i f = 82 a, v gs = 0 v1.0v reverse recovery time t rr i f = 82 a, v gs = 0 v, 60 ns reverse recovery charge q rr di/dt = 100 a/ m s 110 nc h test circuit 3 gate charge v gs = 20 ? 0 v pg. r g = 25 w 50 w d.u.t. l v dd test circuit 1 avalanche capability pg. r g = 10 w d.u.t. r l v dd test circuit 2 switching time r g pg. i g = 2 ma 50 w d.u.t. r l v dd i d v dd i as v ds bv dss starting t ch v gs 0 t = 1 m s duty cycle 1 % t v gs wave form i d wave form v gs i d 10 % 0 0 90 % 90 % 90 % v gs(on) i d t on t off t d(on) t r t d(off) t f 10 %10 % www.datasheet.in
data sheet d14130ej1v0ds00 3 2sK3353 package drawing (unit: mm) remark the diode connected between the gate and source of the transistor serves as a protector against esd. when this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. 4.8 max. 1.gate 2.drain 3.source 4.fin (drain) 1 2 3 10.6 max. 10.0 3.60.2 4 3.00.3 1.30.2 0.750.1 2.54 typ. 2.54 typ. 5.9 min. 6.0 max. 15.5 max. 12.7 min. 1.30.2 0.50.2 2.80.2 f 1) to-220ab (mp-25) 3) to-220smd (mp-25z) 4.8 max. 1.gate 2.drain 3.source 4.fin (drain) 1 2 3 (10) 4 1.30.2 0.750.3 2.54 typ. 2.54 typ. 8.50.2 12.7 min. 1.30.2 0.50.2 2.80.2 1.00.5 2) to-262 (mp-25 fin cut) (10) 1.40.2 1.00.5 2.54 typ. 2.54 typ. 8.50.2 123 3.00.5 110.4 4 2.80.2 4.8 max. 1.30.2 0.50.2 (0.5r) (0.8r) 1.gate 2.drain 3.source 4.fin (drain) 1.00.3 equivalent circuit source body diode gate protection diode gate drain www.datasheet.in
2sK3353 the information in this document is subject to change without notice. before using this document, please confirm that this is the latest version. no part of this document may be copied or reproduced in any form or by any means without the prior written consent of nec corporation. nec corporation assumes no responsibility for any errors which may appear in this document. nec corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. no license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of nec corporation or others. descriptions of circuits, software, and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. the incorporation of these circuits, software, and information in the design of the customer's equipment shall be done under the full responsibility of the customer. nec corporation assumes no responsibility for any losses incurred by the customer or third parties arising from the use of these circuits, software, and information. while nec corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. to minimize risks of damage or injury to persons or property arising from a defect in an nec semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. nec devices are classified into the following three quality grades: "standard", "special", and "specific". the specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. the recommended applications of a device depend on its quality grade, as indicated below. customers must check the quality grade of each device before using it in a particular application. standard: computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots special: transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) specific: aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. the quality grade of nec devices is "standard" unless otherwise specified in nec's data sheets or data books. if customers intend to use nec devices for applications other than those specified for standard quality grade, they should contact an nec sales representative in advance. m7 98. 8 www.datasheet.in
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